the structure, fabrication technology and light emission properties of double barrier mimis tunneling junction are discussed.
讨论了硅基双势垒金属绝缘层金属绝缘层半导体 (mimis)隧道发光结的结构、制备方法及发光特性。
tunneling magnetoresistance (tmr) discovered in magnetic tunneling junction (mtj) has high sensitivity and adjustable junction resistance, so it has potential to be applied in new mram devices.
磁性隧道结结构中发现的隧道磁电阻效应(tmr)灵敏度高、结电阻容易调整,在开发新型mram方面极具应用潜力。
we discuss the quantum characteristics of superconductor tunneling junction (sis) during its transition from zero voltage state to normal state.
本文讨论了超导隧道结(sis)从零电压态跃迁到正常态过程的量子特征。