tunneling magnetoresistance (tmr) discovered in magnetic tunneling junction (mtj) has high sensitivity and adjustable junction resistance, so it has potential to be applied in new mram devices.
磁性隧道结结构中发现的隧道磁电阻效应(tmr)灵敏度高、结电阻容易调整,在开发新型mram方面极具应用潜力。
the invention is applicable to giant magnetoresistance devices or tunneling magnetoresistance devices, such as magnetic sensors, magnetic random-access memorys and magnetic logic devices.
本发明可用于巨磁电阻器件或隧穿磁电阻器件,比如磁性传感器、磁随机存储器和磁性逻辑器件等。
tunneling magnetoresistance (tmr) effect of mtj samples has been successfully studied.
研究mtj样品的隧道结磁电阻(tmr)效应。